sot23 pnp silicon planar medium power transistors issue 4 ? june 1996 partmarking details bc807 ? 5dz bc808 ? 5hz bc807-16 ? 5az BC808-16 ? 5ez bc807-25 ? 5bz bc808-25 ? 5fz bc807-40 ? 5cz bc808-40 ? 5gz complementary types bc807 ? bc817 bc808 ? bc818 absolute maximum ratings. parameter symbol bc807 bc808 unit collector-base voltage v cbo -50 -30 v collector-emitter voltage v ceo -45 -25 v emitter-base voltage v ebo -5 v peak pulse current i cm -1 a continuous collector current i c -500 ma base current i b -100 ma peak base current i bm -200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector cut-off current i cbo -0.1 -5 m a m a v cb =-20v, i e =0 v cb =-20v, i e =0, t amb =150c emitter cut-off current i ebo -10 m a v eb =-5v, i c =0 collector-emitter saturation voltage v ce(sat) -700 mv i c =-500ma, i b =-50ma* base-emitter turn-on voltage v be(on) -1.2 v i c =-500ma, v ce =-1v* static forward current transfer ratio h fe 100 40 600 i c =-100ma, v ce =-1v* i c =-500ma, v ce =-1v* -16 100 250 i c =-100ma, v ce =-1v* -25 160 400 i c =-100ma, v ce =-1v* -40 250 600 i c =-100ma, v ce =-1v* transition frequency f t 100 mhz i c =-10ma, v ce =-5v f=35mhz collector-base capacitance c obo 8.0 pf i e =i e =0, v cb =-10v f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for these devices bc807 bc808 c b e sot23 3 - 9 not recommended for new design please use bcw68h
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